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Freescale Semiconductor Technical Data
Document Number: MRF8P20160H www..com Rev. 0, 4/2010
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 hD (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) -29.8 -30.1 -30.6
MRF8P20160HSR3
1880-2025 MHz, 37 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point ] 160 Watts CW 2025 MHz * Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 2025 MHz Gps (dB) 15.3 hD (%) 44.0 Output PAR (dB) 6.8 ACPR (dBc) -30.0
CASE 465H-02, STYLE 1 NI-780S-4
RFinA/VGSA 3
1 RFoutA/VDSA
Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Symbol VDSS VGS VDD Tstg TC TJ
Value -0.5, +65 -6.0, +10 32, +0 -65 to +150 150 225
Unit Vdc Vdc Vdc C C C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P20160HSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, Pout = 37 W CW, 1900 MHz 28 Vdc, IDQA = 554 mA 28 Vdc, VGSB = 1.6 Vdc Symbol RJC 0.95 0.95 Value (1,2)
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Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(3)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (3) Gate Threshold Voltage (VDS = 10 Vdc, ID = 116 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.5 Adc)
IDSS IDSS IGSS
-- -- --
-- -- --
10 1 1
Adc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.2 1.9 0.05
1.8 2.7 0.11
2.7 3.4 0.15
Vdc Vdc Vdc
Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio
(5)
Gps D PAR ACPR
15.5 43.5 6.4 --
16.5 45.8 6.9 -30.6
18.5 -- -- -28.5
dB % dB dBc
Typical Broadband Performance (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 hD (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) -29.8 -30.1 -30.6
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Part internally matched both on input and output. 5. Measurement made with device in a Symmetrical Doherty configuration. (continued)
MRF8P20160HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
(1)
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Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, 1880-1920 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point, CW IMD Symmetry @ 40 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 37 W Avg. Gain Variation over Temperature (-30 C to +85C) Output Power Variation over Temperature (-30 C to +85C) P1dB P3dB IMDsym -- 13 -- -- -- 107 160 -- -- W W MHz
VBWres GF G P1dB
-- -- -- --
50 0.2 0.01 0.009
-- -- -- --
MHz dB dB/C dBm/C
Typical Broadband Performance -- 2025 MHz (1) (In Freescale 2025 Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 2025 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2025 MHz 1. Measurement made with device in a Symmetrical Doherty configuration. Gps (dB) 15.3 hD (%) 44.0 Output PAR (dB) 6.8 ACPR (dBc) -30.0
MRF8P20160HSR3 RF Device Data Freescale Semiconductor 3
VGA C10 C8 C20 C22
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R2 C6
VDA C18 C16 CUT OUT AREA C C14 C15 P C12
C24
C5 C3 Z1 C1 R1 C4 C2
C26
C13 C17
R3 C7 C11 C9 VGB
C19 VDB C25 C21 C23 MRF8P20160H Rev. 1
Figure 2. MRF8P20160HSR3 Test Circuit Component Layout
Table 5. MRF8P20160HSR3 Test Circuit Component Designations and Values
Part C1, C2, C12, C13 C3 C4, C5 C6, C7, C18, C19 C8, C9, C20, C21, C22, C23 C10, C11 C14, C15 C16, C17 C24, C25 C26 R1 R2, R3 Z1 PCB Description 10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 F, 50 V Chip Capacitors 22 F, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 , 4 W Chip Resistor 8.25 , 1/4 W Chip Resistors 1900 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F100JT250XT ATC600F0R3BT250XT ATC600F1R1BT250XT ATC600F120JT250XT GRM55DR61H106KA88L T491X226K035AT ATC600F2R0BT250XT ATC600F2R2BT250XT 227CKS505M ATC600F0R8BT250XT CW12010T0050GBK CRCW12068R25FKEA GCS351-HYB1900 RO4350B Manufacturer ATC ATC ATC ATC Murata Kemet ATC ATC Illinois Cap ATC ATC Vishay Soshin Rogers
MRF8P20160HSR3 4 RF Device Data Freescale Semiconductor
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Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 3. Possible Circuit Topologies
MRF8P20160HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D D, DRAIN EFFICIENCY (%) 18 17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 14 13.5 13 1880 1900 1920 1940 ACPR 1960 1980 2000 2020 IRL PARC Gps 48 46 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA 44 VGSB = 1.6 Vdc, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 42 Input Signal PAR = 9.9 dB @ 40 0.01% Probability on CCDF -28 -29 ACPR (dBc) -30 -31 -32 -33 2040
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IRL, INPUT RETURN LOSS (dB)
-10 -13 -16 -19 -22 -25
-2.5 -3 -3.5 -4 -4.5 -5 PARC (dB)
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 37 Watts Avg.
-2 0 IMD, INTERMODULATION DISTORTION (dBc) IM3-U -3 0 IM3-L -4 0 IM5-U IM5-L IM7-L
-5 0
IM7-U -6 0 VDD = 28 Vdc, Pout = 40 W (PEP) IDQA = 550 mA, VGSB = 1.6 Vdc, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1900 MHz -70 10 1 TWO-T ONE SPACING (MHz)
100
Figure 5. Intermodulation Distortion Products versus Two-T one Spacing
18 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 17 Gps, POWER GAIN (dB) 16 15 14 13 12 0 -1 dB = 16 W -1 -2 -2 dB = 26 W -3 -3 dB = 36 W -4 -5 -6 0 VDD = 28 Vdc, IDQA = 550 mA VGSB = 1.6 Vdc, f = 1900 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 20 40 60 80 20 10 PARC 0 100 -60 Gps ACPR 30 0 -10 -20 -30 -40 -50 ACPR (dBc)
D
60 50 40
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak-to-Average Ratio Compression (PARC) versus Output Power
MRF8P20160HSR3 6 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
18 17 Gps, POWER GAIN (dB) 16 15 1880 MHz 14 13 12 1 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 100 1880 MHz 1920 MHz 1900 MHz Gps 10 0 300 20 VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth 1920 MHz 1900 MHz 30 D 60 50 D, DRAIN EFFICIENCY (%) 40 0 -10 -20 -30 -40 -50 -60
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Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 15 12 GAIN (dB) 9 6 3 0 1660 IRL Gain 0 -7 -14 -21 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc 1720 1780 1840 1900 1960 2020 2080 -28 -35 -42 2140 IRL (dB)
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal (dB) 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 2 4 6 8 10 12 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW
PEAK-T O-A VERAGE (dB)
Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
Figure 10. Single-Carrier W-CDMA Spectrum MRF8P20160HSR3 RF Device Data Freescale Semiconductor 7
ACPR (dBc)
ACPR
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VDD = 28 Vdc, IDQA = 550 mA f MHz 1880 1900 1920 Max Pout (1) Watts 98 98 97 dBm 49.9 49.9 49.9 Zsource W 5.14 - j9.41 7.59 - j9.88 8.90 - j9.65 Zload W 1.56 - j5.24 1.58 - j5.37 1.57 - j5.48
(1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Matching Network Device Under Test Output Matching Network
Z
source
Z
load
Figure 11. Maximum Output Power -- Doherty Load Pull Optimization for Carrier Side
VDD = 28 Vdc, IDQA = 550 mA f MHz 1880 1900 1920 Max Eff. (1) % 65.1 64.6 64.6 Zsource W 5.14 - j9.41 7.59 - j9.88 8.90 - j9.65 Zload W 3.04 - j3.65 4.13 - j2.87 4.12 - j3.15
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Matching Network Device Under Test Output Matching Network
Z
source
Z
load
Figure 12. Maximum Efficiency -- Doherty Load Pull Optimization for Carrier Side
MRF8P20160HSR3 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 45 26 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB Watts 103 104 104 dBm 50.1 50.2 50.2 P3dB Watts 122 120 118 dBm 50.9 50.8 50.7 1900 MHz 1900 MHz 1920 MHz 1880 MHz 1880 MHz 1920 MHz Actual Ideal
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f (MHz) 1880 1900 1920
Test Impedances per Compression Level f (MHz) 1880 1900 1920 P1dB P1dB P1dB Zsource 5.14 - j9.41 7.59 - j9.88 8.90 - j9.65 Zload 1.65 - j5.46 1.67 - j5.43 1.66 - j5.50
Figure 13. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P20160HSR3 RF Device Data Freescale Semiconductor 9
ALTERNATE CHARACTERIZATION -- 2025 MHz
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VGA C8 C10 R2 C6 C18* C14 C3 Z1 C1 C2 R1 C5 CUT OUT AREA C4 C C12 C16 C15 C17 C13 P C19* R3 C7 C21 VGB C27 C28 C20 C22 C24 C26
VGA
C11 C9 VGB * Stacked C23 C25 MRF8P20160H Rev. 1
Figure 14. MRF8P20160HSR3 Test Circuit Component Layout -- 2025 MHz
Table 6. MRF8P20160HSR3 Test Circuit Component Designations and Values -- 2025 MHz
Part C1, C2, C6, C7, C12, C13, C20, C21 C3, C14, C15 C4, C5 C8, C9, C22, C23, C24, C25 C10, C11 C16, C17 C18, C19 C26, C27 C28 R1 R2, R3 Z1 PCB Description 15 pF Chip Capacitors 0.3 pF Chip Capacitors 2.4 pF Chip Capacitors 10 F, 50 V Chip Capacitors 22 F, 35 V Tantalum Capacitors 0.6 pF Chip Capacitors 1.1 pF Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitors 50 , 4 W Chip Resistor 8.25 , 1/4 W Chip Resistors 1900 MHz Band 90, 3 dB Chip Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F150JT250XT ATC600F0R3BT250XT ATC600F2R4BT250XT GRM55DR61H106KA88L T491X226K035AT ATC600F0R6BT250XT ATC600F1R1BT250XT 227CKS505M ATC600F0R8BT250XT CW12010T0050GBK CRCW12068R25FKEA GCS351-HYB1900 RO4350B Manufacturer ATC ATC ATC Murata Kemet ATC ATC Illinois Cap ATC ATC Vishay Soshin Rogers
MRF8P20160HSR3 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 2025 MHz
D, DRAIN EFFICIENCY (%) 15.7 15.6 V = 28 Vdc, P = 37 W (Avg.), I DD out DQA = 550 mA 15.5 VGSB = 1.6 Vdc, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal 15.4 PAR = 9.9 dB @ 0.01% Probability on CCDF 15.3 15.2 15.1 15 14.9 14.8 14.7 1995 2000 2005 2010 2015 ACPR 2020 2025 2030 PARC IRL D 44 43 42 41 40 -29 -30 ACPR (dBc) -31 -32 -33 -34 2035 Gps
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Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
-16 -16.5 -17 -17.5 -18 -18.5
-2.5 -3 -3.5 -4 -4.5 -5 PARC (dB)
f, FREQUENCY (MHz)
Figure 15. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 20 Watts Avg.
17 VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single-Carrier W-CDMA, 3.84 MHz Channel 16 Bandwidth Gps, POWER GAIN (dB) 15 2025 MHz 14 13 2025 MHz 12 11 1 2010 MHz Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Gps 0 300 -60 10 2010 MHz ACPR 30 20 D 60 50 D, DRAIN EFFICIENCY (%) 40 0 -10 -20 -30 -40 -50 ACPR (dBc)
Figure 16. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 Gain 15 12 GAIN (dB) 9 6 3 0 1625 IRL VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc 1925 2025 2125 2225 2325 -10 -20 -30 -40 -50 -60 2425 IRL (dB) 0
1725
1825
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
MRF8P20160HSR3 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
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MRF8P20160HSR3 12 RF Device Data Freescale Semiconductor
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MRF8P20160HSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File
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For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Apr. 2010 * Initial Release of Data Sheet Description
MRF8P20160HSR3 14 RF Device Data Freescale Semiconductor
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MRF8P20160HSR3
Document Number: RF Device Data MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor
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